High-Efficiency DC-DC Converters

Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5

文件：716.95 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K2R9E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS

文件：624.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOSFETs Silicon N-channel MOS

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS

文件：624.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 60V VDSS 150V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 240 A \nPower Dissipation PD 300 W \nDrain-Source voltage VDSS 100 V ;

Toshiba

东芝