丝印：K25Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

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Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 25 A \nPower Dissipation PD 180 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

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TO-220

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