丝印：K25E60X；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

文件：242.11 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

文件：338 Kbytes 页数：2 Pages

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无锡固电

丝印：K25E60X5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 120 ns(typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.12 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA)

文件：372.23 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

文件：338 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 25 A \nPower Dissipation PD 180 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

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Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国\n Drain current ID 25 A \nPower Dissipation PD 180 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \n;

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