TK25A

Topstek Current Transducer

TK25A10K3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)

SwichingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=31mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=50S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) •Enhancement-model:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK25A10K3

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=31mΩ(typ.) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

TK25A10K3

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK25A20D

Power MOSFET (N-ch 150V VDSS 250V); Drain current ID 25 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 200 V \nGate-Source voltage VGSS +/-20 V \n;

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚\n

TK25A60X

Power MOSFET (N-ch 500V VDSS 700V); Drain current ID 25 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \n;

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚\n

TK25A60X

丝印：K25A60X；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA)

TK25A60X5

丝印：K25A60X5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=120ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.12Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.2mA)

TK25A60X5

Power MOSFET (N-ch 500V VDSS 700V); Drain current ID 25 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \n;

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚\n

TK25A20D

isc N-Channel MOSFET Transistor