Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.78 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth

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TOSHIBA

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 200 A \nPower Dissipation PD 375 W \nDrain-Source voltage VDSS 40 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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TO-220

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DPAK

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DPAK

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