丝印：K1K0A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.83 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.77 mA)

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Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：π-MOSⅨ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 7.5 A \nPower Dissipation PD 40 W ;

Toshiba

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TO-220

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DPAK

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