Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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丝印：K16J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：248.08 Kbytes 页数：10 Pages

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iscN-Channel MOSFET Transistor

文件：326.48 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

文件：195.63 Kbytes 页数：6 Pages

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Switching Voltage Regulators

文件：250.44 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

文件：313.85 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：314.13 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 16 A \nPower Dissipation PD 250 W \nDrain-Source voltage VDSS 550 V \nGate-Source voltage VGSS +/-30 V ;

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Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 日本 Drain current ID 15.8 A \nPower Dissipation PD 130 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

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