Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\n Drain current ID 16 A \nPower Dissipation PD 150 W \nDrain-Source voltage VDSS 600 V \n;

Toshiba

东芝

Switching Regulator Applications

文件：207.17 Kbytes 页数：6 Pages

TOSHIBA

东芝

Schottky Barrier Rectifier

Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency ope

文件：145.81 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifiers

Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency ope

文件：72.18 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifiers

Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency ope

文件：72.18 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司