Field Effect Transistor Silicon N-Channel MOS Type (?-MOS VI)

○ Switching Regulator Applications • Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：512.14 Kbytes 页数：6 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available Drain current ID 15 A \nPower Dissipation PD 150 W \nDrain-Source voltage VDSS 500 V ;

Toshiba

东芝

Dual Schottky Barrier Rectifiers

文件：96.87 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

文件：161.54 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件：148.41 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司