TK10A60W

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

TK10A60W

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators

TK10A60W

N-Channel 650V (D-S) Power MOSFET

TK10A60W5

Marking：K10A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=85ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.35Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK10A60W5

isc N-Channel MOSFET Transistor

TSU10A60

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

U10A60

FASTRECTIFIERS(10A,300-600V)

UltraFastRecoveryRectifierDiodes ULTRAFASTRECTIFIERS10AMPERES300--600VOLTS

UF10A60

UtraFastRecoveryRectifierDiodes

UFF10A60

FullPlasticUltrafastPowerRectifiers

VSIB10A60

Single-PhaseSingleIn-LineBridgeRectifiers