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TK10A

Topstek Current Transducer

文件:110.32 Kbytes 页数:3 Pages

TOPSTEK

TK10A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件:233.61 Kbytes 页数:6 Pages

SYC

TK10A50D

丝印:K10A50D;Package:SC-67;TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en • Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500

文件:205.01 Kbytes 页数:6 Pages

TOSHIBA

东芝

TK10A50D

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

TK10A50D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.99 Kbytes 页数:2 Pages

ISC

无锡固电

TK10A50W

丝印:K10A50W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

文件:255.59 Kbytes 页数:10 Pages

TOSHIBA

东芝

TK10A55D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=550V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.98 Kbytes 页数:2 Pages

ISC

无锡固电

TK10A55D

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

TK10A60D

丝印:K10A60D;Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件:164.35 Kbytes 页数:6 Pages

TOSHIBA

东芝

TK10A60D

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

技术参数

  • Polarity:

    N-ch

  • VDSS(V):

    500

  • VGSS(V):

    +/-30

  • ID(A):

    10

  • PD(W):

    45

  • Ciss(pF):

    1050

  • Qg(nC):

    20

  • =10V:

    0.72

  • Number of pins:

    3

  • Surface mount package:

    N

  • Package name(Toshiba):

    TO-220SIS

  • Generation:

    π-MOSⅦ

  • Width×Length×Height(mm):

    10.0 x 15.0 x 4.5

  • Package Size(mm^2):

    150.00

  • Drive voltage type:

    10V Gate Drive

供应商型号品牌批号封装库存备注价格
TOSHIBA
11+
TO-220F
8000
全新原装,绝对正品现货供应
询价
TOSHIBA
24+/25+
21450
原装正品现货库存价优
询价
TOSHIBA
25+
TO-220F
2000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TOSHIBA
23+
TO-220
5000
原装正品,假一罚十
询价
TOSHIBA
17+
TO-220F
6200
100%原装正品现货
询价
TOSHIBA
2016+
TO-220F
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
TOSHIBA/东芝
24+
TO-220F
5000
只做原装公司现货
询价
Toshiba
24+
NA
3000
进口原装正品优势供应
询价
TOSH
11+
TO220
5750
原装现货海量库存欢迎咨询
询价
TOSHIBA
24+
TO-220F
2500
原厂/代理渠道价格优势
询价
更多TK10A供应商 更新时间2025-12-12 11:03:00