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TK10A

Topstek Current Transducer

TOPSTEKTopstek Inc.

Topstek Inc.

TK10A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A50D

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A50D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10A50W

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A55D

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A55D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10A60D

Switching Regulator Applications

•Lowdrain-sourceON-resistance:RDS(ON)=0.58Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A60D

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A60D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10A60D5

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A60D5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.05Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10A60W

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10A60W

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A60W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=85ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.35Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A80W

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.46Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TK10A50W

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10A60W

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

TK10A60W5

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10A80E

MOSFETs Silicon N-Channel MOS (?-MOS??

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

详细参数

  • 型号:

    TK10A

  • 制造商:

    TOPSTEK

  • 制造商全称:

    TOPSTEK

  • 功能描述:

    Topstek Current Transducer

供应商型号品牌批号封装库存备注价格
TOSHIBA
11+
TO-220F
8000
全新原装,绝对正品现货供应
询价
TOSHIBA
11+
21450
原装正品香港现货
询价
TOSHIBA
2020+
TO-220F
2000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TOS东芝
1406+
TO-220F
16600
绝对原装现货
询价
TOSHIBA
2017+
TO-220F
54789
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
TOSHIBA
23+
TO-220
5000
原装正品,假一罚十
询价
TOSHIBA
1606MY
TO-220F
3000
原厂直销
询价
TOSHIBA
23+
TO220F
8820
全新原装优势
询价
TOSHIBA
17+
TO-220F
6200
100%原装正品现货
询价
TOSHIBA
2016+
TO-220F
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
更多TK10A供应商 更新时间2024-4-29 9:02:00