MOSFETs Silicon N-Channel MOS (DTMOS)

Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 5 mA) Applications • Switching Voltage Regulators

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TOSHIBA

东芝

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 100 A \nPower Dissipation PD 797 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

AXEL - 100W 60° Lens Accessory

DESCRIPTION AXEL - 100W 60° Lens Accessory

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KNIGHTSBRIDGE

CERMOD-TM HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT?셎

DESCRIPTION C E R M O D ™ modules are isolated fully hermetic power modules which combine the latest NPT IGBT and Soft Recovery Rectifier technology housed in a low thermal resistance ceramic to metal sealed light weight package. This series of CERMOD™ power modules are offered in a three phase b

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IRF