丝印：K090A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.075 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.27 mA)

文件：412.49 Kbytes 页数：10 Pages

TOSHIBA

东芝

N-Channel MOSFET

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V APPLICATIONS ·Power Factor Correction (PFC) ·Switching Power Supplies

文件：302.05 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：DTMOSⅥ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Please contact us. Drain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 30 A \nPower Dissipation PD 45 W ;

Toshiba

东芝

TO-220F

TOSHIBA/东芝

上传：深圳庞田科技有限公司

TO-220F

TOSHIBA/东芝

上传：深圳庞田科技有限公司