具有待机模式的安全HS-CAN收发器 new

恩XP

N-Channel 150 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：622.46 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 150-V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature APPLICATIONS • Primary Side Switch

文件：375.07 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

Lead-free soldering compatible

文件：729.57 Kbytes 页数：25 Pages

Stanley

STANLEY ELECTRIC CO.,LTD.