Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -40 V) (4) Enhancement mode: Vt

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MOSFETs Silicon P-Channel MOS (U-MOS)

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Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -40 V) (4) Enhancement mode: Vt

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Power MOSFET (P-ch single)

Application Scope：Motor drivers / Switching regulators\nPolarity：P-ch\nGeneration：U-MOSⅥ\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -80 A \nPower Dissipation PD 100 W \nDrain-Source voltage VDSS -40 V \nGate-Source voltage VGSS -20/+10 V ;

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