Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.6 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: Vt

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -60A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 11.2Ω(Max)@VGS= -10V DESCRIPTION · Automotive · DC-DC Converters · Motor Drivers

文件：299.45 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFETs Silicon P-Channel MOS (U-MOS)

文件：246.25 Kbytes 页数：9 Pages

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Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.6 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: Vt

文件：273.67 Kbytes 页数：9 Pages

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Power MOSFET (P-ch single)

Application Scope：Motor drivers / Switching regulators\nPolarity：P-ch\nGeneration：U-MOSⅥ\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -60 A \nPower Dissipation PD 100 W \nDrain-Source voltage VDSS -60 V \nGate-Source voltage VGSS -20/+10 V ;

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