Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 38.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: V

文件：264.11 Kbytes 页数：9 Pages

TOSHIBA

东芝

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =63mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.39 Kbytes 页数：2 Pages

ISC

无锡固电

P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -30A RDS(ON)

文件：972.82 Kbytes 页数：4 Pages

Bychip

百域芯

MOSFETs Silicon P-Channel MOS (U-MOS)

文件：249.29 Kbytes 页数：9 Pages

TOSHIBA

东芝

P-Channel 60 V (D-S) MOSFET

文件：1.00375 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 38.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: V

文件：264.11 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (P-ch single)

Application Scope：Motor drivers / Switching regulators\nPolarity：P-ch\nGeneration：U-MOSⅥ\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -15 A \nPower Dissipation PD 41 W \nDrain-Source voltage VDSS -60 V \nGate-Source voltage VGSS -20/+10 V ;

Toshiba

东芝