Switching Voltage Regulators

Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) Applications • Automotive • Motor Drivers • DC-DC Conve

文件：245.09 Kbytes 页数：9 Pages

TOSHIBA

东芝

Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -40 V) (4) Enhancement mode: V

文件：259.01 Kbytes 页数：9 Pages

TOSHIBA

东芝

Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -40 V) (4) Enhancement mode: V

文件：259.01 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (P-ch single)

Application Scope：Motor drivers / Switching regulators\nPolarity：P-ch\nGeneration：U-MOSⅥ\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -10 A \nPower Dissipation PD 27 W \nDrain-Source voltage VDSS -40 V \nGate-Source voltage VGSS -20/+10 V ;

Toshiba

东芝