NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● 20 W Pulsed Power Dissipation ● 100 V Capability ● 2 A Continuous Collector Current ● 4 A Peak Collector Current

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POINN

NPN SILICON POWER DARLINGTONS

Power Innovations

WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS

Description The single TSH110 and TSH111, the dual TSH112, the triple TSH113 and the quad TSH114 are current feedback operational amplifiers featuring a very high slew rate of 450V/µs and a large bandwidth of 100MHz, with only a 3.2mA quiescent supply current. The TSH111 and TSH113 feature a Stan

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STMICROELECTRONICS

意法半导体

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat pa

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NEC

瑞萨

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

FEATURES * LOW RDS(ON) - 3Ω

文件：20.08 Kbytes 页数：1 Pages

ZETEX