U840B

Digital/Wipe-WashControlforRearorFrontWiper

U840B-FP

Digital/Wipe-WashControlforRearorFrontWiper

UF840

8A,500V,0.85廓,N-CHANNELPOWERMOSFET

UF840

8A,500V,0.85廓,N-CHANNELPOWERMOSFET

UF840

8A,500V,0.85ohm,N-CHANNELPOWERMOSFET

DESCRIPTION TheN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. FEATURES *LowRDS(ON)=0.85Ω *SinglePulseAvalanc

UF840

ULTRAFASTRECOVERYRECTIFIER

UltraFastRecoveryRectifiers •UltraFastRecoveryRectifier •175°CJunctionTemperature •VRRM300TO500Volts •8Ampscurrentrating •tRR50nsecmaximum

UPA840

NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE

DESCRIPTION TheµPA840TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain Q

UPA840TC

NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE

DESCRIPTION TheµPA840TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain Q

UPS840

SCHOTTKYBARRIERRECTIFIER8AMPERES40VOLTS

SURFACEMOUNT 8ASCHOTTKYRECTIFIER POWERMITE®3PowerSurfaceMountPackage Features: •LowProfile--MaximumHeightof1.1mm •FootprintAreaof16.51mm2 •LowVFProvidesHigherEfficiency •Suppliedin16mmTapeandReel--6,000UnitsperReel •LowThermalResistancewithDirect

USD840

POWERSCHOTTKYRECTIFIERS