High-Voltage NPN Silicon Power Transistor

HIGH-VOLTAGE NPN SILICON POWER TRANSISTOR . . . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V(Min) * 3 A Rated Collector Current * fT=2.5MHz(Min) @IC = 200 mA

文件：127.31 Kbytes 页数：3 Pages

MOSPEC

统懋

isc Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain -hFE = 30~150@ IC= 0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) APPLICATIONS • Designed for line operated audio output amplifier,and switching power supply drivers applications.

文件：238.58 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Continuous Collector Current-IC= -5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) • Collector Power Dissipation- : PC= 30W @TC≤ 100℃ APPLICATIONS • Designed for power amplifier and high speed switching applications.

文件：144.22 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Continuous Collector Current-IC= -5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) • Collector Power Dissipation- : PC= 20W @TC≤ 100℃ APPLICATIONS • Designed for power amplifier and high speed switching applications.

文件：68.39 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For use in high-frequency drivers In aduio amplifiers

文件：120.95 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Continuous Collector Current-IC= -5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) • Collector Power Dissipation- : PC= 20W @TC≤ 100℃ APPLICATIONS • Designed for power amplifier and high speed switching applications.

文件：298.71 Kbytes 页数：2 Pages

ISC

无锡固电

三极管

Mospec

统懋

BJT

NJS

Trans GP BJT PNP 150V 8A

NJS