General Purpose Amplifier and Switching Applications

TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS

文件：25.87 Kbytes 页数：2 Pages

boca

博卡

PNP EXPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C

文件：123.42 Kbytes 页数：2 Pages

UTC

友顺

PNP EXPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C

文件：116.08 Kbytes 页数：3 Pages

UTC

友顺

PNP Transistor Bare Die

Features Collector current up to 3A High switching speed Improved hFE linearity Solderable back metal High Reliability tested grades for Military + Space

文件：236.3 Kbytes 页数：2 Pages

SS

Silicon PNP Power Transistors

Features • The Complementary NPN Types are the TIP31 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

文件：125.67 Kbytes 页数：2 Pages

MCC

3A PNP Epitaxial Planar Power Transistor

Description TIP32CE3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = -1.2V(max) @ IC = -3A • High collector-emitter sustaining voltage, BVCEO(SUS) = -100V(min) • High current gain-bandwidth product ,

文件：150.73 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31CF.

文件：357.02 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Large current capacitance ● Complementary NPN Types:TIP31CF APPLICATIONS ● Medium power linear switching applications

文件：775.19 Kbytes 页数：3 Pages

JIANGSU

长电科技

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：85.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：123.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体