PNP Epitaxial Darlington Transistor

PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122

文件：168.58 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power Darlingtons for Linear and Switching Applications

TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

文件：28.13 Kbytes 页数：2 Pages

boca

博卡

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

文件：321.48 Kbytes 页数：4 Pages

CDIL

Silicon Power darlington Complementary transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR TIP120, TIP125 series types are Complementary Silicon Power Darlington Transistors designed for low speed switching and amplifier applications.

文件：69.1 Kbytes 页数：2 Pages

Central

Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistors • Collector current 5 A • Plastic case TO-220AB • Weight approx. 2.2 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：49.48 Kbytes 页数：2 Pages

Diotec

德欧泰克

Silicon PNP Darlington Power Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 •

文件：163.14 Kbytes 页数：2 Pages

MCC

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage - Vceo(sus) = 60V (minimum) - TIP120, TIP125 80V (minimum) - TIP121, TIP126 100V (minimum) - TIP122, TIP127 • Collector-emitter saturation voltage - Vce(sat) = 2V (max

文件：1.13386 Mbytes 页数：5 Pages

MULTICOMP

易络盟

PNP/NPN Silicon Power Transistor

FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP)

文件：768.39 Kbytes 页数：3 Pages

WEITRON