TIP122FP

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

TIP122FP

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A=4.0V(Max)@IC=5A •ComplementtoTypeTIP127FP APPLICATIONS •Designedforgeneralpurpo

TIP122FP

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■STMicroelectronicsPREFERRED SALESTYPES ■FULLYINSULATEDPACKAGE(U.L. COMPLIANT)FOREASYMOUNTING DESCRIPTION TheTIP122FPisasiliconEpitaxial-BaseNPN powertransistorinmonolithicDarlington configurationmountedinJedecTO-220FPfully moldedisolatedpackage.Itisintented

TIP122FP

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP122FP

Complementary power Darlington transistors

TIP122FP

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 5A TO220FP

TIP122FP_03

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■STMicroelectronicsPREFERRED SALESTYPES ■FULLYINSULATEDPACKAGE(U.L. COMPLIANT)FOREASYMOUNTING DESCRIPTION TheTIP122FPisasiliconEpitaxial-BaseNPN powertransistorinmonolithicDarlington configurationmountedinJedecTO-220FPfully moldedisolatedpackage.Itisintented

TIP122FP_09

Complementary power Darlington transistors