TIP116

POWER TRANSISTORS(2.0A,60-100V,50W)

TIP116

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

TIP116

Plastic Medium-Power Complementary Silicon Transistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)

TIP116

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP110,TIP111andTIP112 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A

TIP116

PNP SILICON POWER DARLINGTONS

PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications

TIP116

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP110/111/112

TIP116

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

TIP116

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage

TIP116

PNP Epitaxial Silicon Darlington Transistors

Features •HighDCCurrentGain:hFE=1000@VCE=4.0V,IC=1.0A(Min.) •LowCollector-EmitterSaturationVoltage •ComplementarytoTIP110/111/112 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating

TIP116

Silicon PNP Darlington Power Transistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP110/111/112 APPLICATIONS •Forindustrialuse