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TIP126

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP120,TIP121andTIP122 ●65Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●MinimumhFEof1000at3V,3A

POINN

Power Innovations Ltd

TIP126

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TIP126

PNP (MEDIUM POWER LINEAR SWITCHING APPLICATIONS)

MEDIUMPOWERLINEARSWITCHINGAPPLICATIONS •ComplementtoTIP121

SamsungSamsung semiconductor

三星三星半导体

TIP126

Medium Power Linear Switching Applications

PNPEpitaxialDarlingtonTransistor Features •MediumPowerLinearSwitchingApplications •ComplementarytoTIP120/TIP121/TIP122

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP126

Si-Epitaxial PlanarTransistors

Si-EpitaxialPlanarTransistors •Collectorcurrent5A •PlasticcaseTO-220AB •Weightapprox.2.2g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

TIP126

Plastic-Encapsulated Transistors

PLASTICPOWERTRANSISTORS HighPowerSwitching,HammerDrive,PulseMotorDriveandInductiveLoadDriveApplications

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TIP126

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS HighPowerSwitching,HammerDrive,PulseMotorDriveandInductiveLoadDriveApplications

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TIP126

Darlington Power Transistors (PNP)

DarlingtonPowerTransistors(PNP) Features •Designedforgeneral-purposeamplifierandlowspeed switchingapplications •RoHSCompliant

TAITRON

TAITRON Components Incorporated

TIP126

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •WithTO-220Cpackage •DARLNGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP120/121/122 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TIP126

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltIn Base-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP120/121/122

SEMIHOW

SemiHow Co.,Ltd.

详细参数

  • 型号:

    TIP1

  • 功能描述:

    达林顿晶体管 NPN Epitaxial Sil Darl

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
DISCRETE
1000
FSC
7000
询价
ST
TO220
3200
原装长期供货!
询价
TI
05+
原厂原装
4505
只做全新原装真实现货供应
询价
FAIRCHILD
24+
T0-220
2400
询价
ON
11+
TO-220
8000
全新原装,绝对正品现货供应
询价
ST
23+
TO-220
18689
询价
ST
98+
TO220/3
5600
全新原装进口自己库存优势
询价
ST
16+
TO-220
10000
全新原装现货
询价
FSC
23+
TO-3P
8000
原装正品,假一罚十
询价
ST
24+
DIP
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多TIP1供应商 更新时间2025-7-22 9:01:00