MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz ･LOW INTERMODULATION DISTORTION IM3(MIN.) = -44dBc at Pout= 34dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

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HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz

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HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz

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HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz

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MICROWAVE POWER GaAs FET

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HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz

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IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level

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HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz

文件：144.4 Kbytes 页数：4 Pages

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MICROWAVE POWER GaAs FET

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HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz

文件：50.66 Kbytes 页数：4 Pages

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