MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET FEATURES HIGH POWER P1dB=45.0dBm at 14.0GHz to 14.5GHz HIGH GAIN G1dB=5.5dB at 14.0GHz to 14.5GHz LOW INTERMODULATION DISTORTION IM3(Min.)

文件：49.16 Kbytes 页数：2 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

Internally Matched Power GaAs FET

文件：296.26 Kbytes 页数：4 Pages

EUDYNA

N-CHANNEL GaAs MESFET

3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To

文件：199.02 Kbytes 页数：14 Pages

RENESAS

瑞萨

N-CHANNEL GaAs MESFET

DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

文件：82.74 Kbytes 页数：12 Pages

NEC

瑞萨