首页 >TIL146>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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POWERDARLINGTONS DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SILICONDARLINGTONTRANSISTORPNPEPITAXIAL(HIGHDCCURRENTGAIN) HIGHDCCURRENTGAIN •ComplementarytoTIP140/141/142 | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | WINGS | ||
PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A | TRSYS Transys Electronics | TRSYS | ||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeTIP140/141/142 APPLICATIONS ·Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SILICONPLANARDARLINGTONPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL Continental Device India Limited | CDIL | ||
SILICONPOWERDARLINGTONCOMPLEMENTARYTRANSISTORS TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
PNPEpitaxialSiliconDarlingtonTransistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS | COMSET Comset Semiconductor | COMSET | ||
PNPEpitaxialSiliconDarlingtonTransistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION ·WithTO-3PNpackage ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeTIP140/141/142 APPLICATIONS ·Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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