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TIP121

MediumPowerLinearSwitchingApplications

Features •MediumPowerLinearSwitchingApplications •ComplementarytoTIP125/TIP126/TIP127

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP121

PlasticMedium-PowerComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

TIP121

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithTIP125,TIP126andTIP127 ●65Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●MinimumhFEof1000at3V,3A

POINN

Power Innovations Ltd

TIP121

DARLINGTON5AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium-PowerComplementarySiliconTransistors ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@100mAdc VCEO(sus)=60Vdc(Min)—TIP12

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

TIP121

POWERTRANSISTORS(5.0A,60-100V,65W)

...designedforgeneral−purposeamplifierandlow−speedswitchingapplications. FEATURES: •Collector−EmitterSustainingVoltage− VCEO(sus)=60V(Min)−TIP120,TIP125 =80V(Min)−TIP121,TIP126 =100V(Min)−TIP122,TIP127 •LowColl

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

TIP121

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TIP121

PowerDarlingtonsforLinearandSwitchingApplications

TIP120,121,122NPNPLASTICPOWERTRANSISTORS TIP125,126,127PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

TIP121

Si-EpitaxialPlanarTransistors

Si-EpitaxialPlanarTransistors Collectorcurrent–Kollektorstrom5A PlasticcaseTO-220AB Weightapprox.–Gewichtca.2.2g PlasticmaterialhasULclassification94V-0 Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

TIP121

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP125/126/127

SEMIHOW

SemiHow Co.,Ltd.

TIP121

ComplementarypowerDarlingtontransistors

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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