首页 >TIL116SMT&R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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OPTICALLYCOUPLEDISOLATORHOTOTRANSISTOROUTPUT DESCRIPTION TheTIL111,TIL114,TIL116,TIL117seriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES lOptions:- 10mmleadspread-addGafterpartno. Surfac | ISOCOMISOCOM COMPONENTS 英国安数光 | ISOCOM | ||
PNPSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP110,TIP111andTIP112 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A | POINN Power Innovations Ltd | POINN | ||
PlasticMedium-PowerComplementarySiliconTransistors PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS
| MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
POWERTRANSISTORS(2.0A,60-100V,50W)
| MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
MonolithicConstructionWithBuiltInBase-EmitterShuntResistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP110/111/112 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPSILICONPOWERDARLINGTONS PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications | TRSYS Transys Electronics | TRSYS | ||
PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS
| bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | boca | ||
PlasticMedium-PowerComplementarySiliconTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TO-220-PowerTransistorsandDarlingtons | RECTRON Rectron Semiconductor | RECTRON |
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