丝印：V2450；Package：VSON；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

文件：1.86221 Mbytes 页数：37 Pages

TI

德州仪器

丝印：V2450；Package：VSON；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

文件：1.91582 Mbytes 页数：37 Pages

TI

德州仪器

丝印：V2450；Package：VSON；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

文件：2.02953 Mbytes 页数：40 Pages

TI

德州仪器

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

文件：457.51 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

文件：457.51 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：95.14 Kbytes 页数：4 Pages

SUTEX