首页 >THGBMAG7B2JBAWM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
500mWZenerDiode1.7to37.2Volts Features •LowLeakage •LowZenerImpedance •HighReliability | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
Glass-EncapsulateDiodes | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
SILICONEPITAXIALPLANERZENERDIODES forstabilizedpowersupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. •Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. •Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. •Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforLowNoiseApplication | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforStabilizedPowerSupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mW. •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •LLDPackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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