24 mm Discrete HFET

24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5 at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

文件：153.54 Kbytes 页数：9 Pages

TRIQUINT

24 mm Discrete HFET

Qorvo

威讯联合

Intelligent Power Device High Voltage Monolithic Silicon Power IC

文件：320.89 Kbytes 页数：23 Pages

TOSHIBA

东芝

Intelligent Power Device High Voltage Monolithic Silicon Power IC

文件：349.85 Kbytes 页数：23 Pages

TOSHIBA

东芝

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • New S type package, allowing supply with the radial taping

文件：84.26 Kbytes 页数：6 Pages

PANASONIC

松下