10W, 32V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor

文件：1.92363 Mbytes 页数：21 Pages

TRIQUINT

10 W, 32 V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor

文件：1.63843 Mbytes 页数：20 Pages

QORVO

威讯联合

10W, 32V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor

文件：1.92363 Mbytes 页数：21 Pages

TRIQUINT

10 W, 32 V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor

文件：1.63843 Mbytes 页数：20 Pages

QORVO

威讯联合

0.03 - 3.0 GHz, 10 Watt, 32 V GaN RF Input-Matched Transistor

Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within • Frequency range: 30 MHz - 3.0 GHz\n• Output power (P3dB): 11W at 2.4 GHz\n• Linear gain: 17.1 dB typical at 2.4 GHz\n• Typical PAE3dB: 62.7% at 2.4 GHz\n• Operating voltage: 32V\n• Low thermal resistance package\n• CW and pulse capable\n• 3 x 3 mm package;

Qorvo

威讯联合