25 W, 32 V, DC – 12 GHz, GaN RF Transistor

Key Features • Frequency: DC to 12 GHz • Output Power (P3dB)1: 22 W • Linear Gain1: 11 dB • Typical PAE (3dB)1: 45% • Operating Voltage: 32 V • Low thermal resistance package • CW and Pulse capable • 3 x 4 mm package Note: @ 9.4 GHz Applications • Military radar • Commercial rada

文件：1.51913 Mbytes 页数：15 Pages

QORVO

威讯联合

DC - 12 GHz, 25 Watt, 32 V GaN RF Transistor

Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avio • Frequency range: DC - 12 GHz\n• Output power (P3dB): 22 W at 9.4 GHz\n• Linear gain: 11 dB typical at 9.4 GHz\n• Typical PAE3dB: 45% at 9.4 GHz\n• Operating voltage: 32V\n• Low thermal resistance package\n• CW and pulse capable\n• 4 x 3 mm package;

Qorvo

威讯联合

MX150L??Female Terminal for 14-16 AWG Wire, Tin Plated, Metal Strip Carrier

文件：120.8 Kbytes 页数：3 Pages

MOLEX

莫仕

MX150L??Female Terminal for 14-16 AWG Wire, Tin Plated, Metal Strip Carrier

文件：120.8 Kbytes 页数：3 Pages

MOLEX

莫仕

MX150L??Female Terminal for 14-16 AWG Wire, Tin Plated, Metal Strip Carrier

文件：120.8 Kbytes 页数：3 Pages

MOLEX

莫仕