Ka-Band 2W Power Amplifier

文件：162.01 Kbytes 页数：8 Pages

TriQuint

Ka Band 2W Power Amplifier

文件：183.26 Kbytes 页数：9 Pages

TriQuint

Ka Band 2W Power Amplifier

文件：183.26 Kbytes 页数：9 Pages

QORVO

威讯联合

30 - 40 GHz, 2 Watt Ka Band Power Amplifier

Qorvo's TGA4516 is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using Qorvo's 0.15um power pHEMT process. The small chip size is achieved by utilizing Qorvo's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing pr • 30 to 40 GHz bandwidth\n• > 33 dBm nominal Psat @ Pin = 20dBm\n• 18 dB nominal gain\n• Bias: 6 V, 1050 mA Idq (1.9 A under RF Drive)\n• 0.15 um 3MI pHEMT technology\n• Chip dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004 in);

Qorvo

威讯联合

Ka Band 2W Power Amplifier

文件：183.26 Kbytes 页数：9 Pages

TriQuint

Ka-Band 2W Power Amplifier

文件：272.1 Kbytes 页数：10 Pages

TriQuint

Ka-Band 2W Power Amplifier

文件：272.1 Kbytes 页数：10 Pages

TriQuint

30 - 40 GHz, 2 Watt Ka Band Power Amplifier

Qorvo's TGA4516-TS is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using Qorvo's 0.15um power pHEMT process and is soldered to a CuMo thermal spreader. The small chip size is achieved by utilizing Qorvo's 3 metal layer interconnect (3MI) design technology that all • 30 to 40 GHz bandwidth\n• > 33 dBm nominal Psat @ Pin = 20 dBm\n• 18 dB nominal gain\n• Bias: 6 V, 1050 mA Idq (1.9 A under RF Drive)\n• 0.15 um 3MI MMW pHEMT technology\n• Thermal spreader dimensions: 2.921 x 2.438 mm;

Qorvo

威讯联合

Ka-Band 2W Power Amplifier

Qorvo

威讯联合