5.9 – 7.1 GHz Power Amplifier

Key Features • Frequency Range: 5.9 – 7.1 GHz • Power: +40 dBm Psat • Gain: 31 dB • TOI: 47 dBm at 30 dBm/tone • Integrated Power Detector • Bias: VD1 = VD2 = +6 V, ID1 + ID2 = 1000 mA, VD3 = +28V, ID3 = 190mA • Package Dimensions: 7.0 x 9.0 x 0.9 mm Applications • Point-to-Point Radio

文件：963.36 Kbytes 页数：15 Pages

QORVO

威讯联合

5.9 ??7.1 GHz Power Amplifier

文件：908.25 Kbytes 页数：15 Pages

QORVO

威讯联合

5.9 - 7.7 GHz Power Amplifier

Qorvo's TGA2753-SM is a C-Band Power Amplifier with integrated power detector. The TGA2753-SM operates from 5.9 - 7.1 GHz and is designed using Qorvo's power GaAs pHEMT and GaN HEMT production processes.\nThe TGA2753-SM typically provides 40 dBm of saturated output power with small signal gain of 31 • Frequency Range: 5.9 - 7.1 GHz\n• Power: 40 dBm Psat\n• Gain: 31 dB\n• TOI: 47 dBm at 30 dBm/tone\n• Integrated Power Detector\n• Bias: Vd1 = Vd2 = 6 V, Id1 + Id2 = 1000 mA, Vd3 = 28V, Id3 = 190mA\n• Package Dimensions: 7.0 x 9.0 x 0.9 mm;

Qorvo

威讯联合

UCC2753x 2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver

1 Features 1• Low-cost gate driver (offering optimal solution for driving FET and IGBTs) • Superior replacement to discrete transistor pair drive (providing easy interface with controller) • TTL and CMOS compatible input logic threshold (independent of supply voltage) • Split output options

文件：1.54636 Mbytes 页数：50 Pages

TI

德州仪器

SWITCHING N-CHANNEL POWER MOSFET

文件：69.24 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2753GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 21.4 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 31.6 mΩ MAX. (VGS =

文件：295.5 Kbytes 页数：10 Pages

RENESAS

瑞萨