TGA2622-SM数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TGA2622-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2622-SM typically generates 35W of saturated output power with a power-added efficiency greater than 42% and 27.5dB of large signal gain.
The TGA2622-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2622-SM offers superior power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.

特性 Features

• Frequency range: 9 - 10 GHz
• Pout : 45.5 dBm (PIN = 18 dBm)
• PAE: > 42 % (PIN = 18 dBm)
• Power gain: 27.5 dB (PIN = 18 dBm)
• Bias: VD = 28 V, IDQ = 290 mA, VG = -2.3 V typical (Pulsed: PW = 100 us, DC = 10%)
• Package dimensions: 7 x 7 x 1.75 mm

应用 Application

• Weather and Marine Radar