9 – 10 GHz 35 W GaN Power Amplifier

Product Features • Frequency Range: 9 – 10 GHz • PSAT: 45.5 dBm @ PIN = 18 dBm • PAE: > 43 % @ PIN = 18 dBm • Power Gain: 27.5 dB @ PIN = 18 dBm • Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical, pulsed (PW = 100 μs, DC = 10 %) • Package Dimensions: 15.2 x 15.2 x 3.5 mm • Packag

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QORVO

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9 to 10 GHz 35 W GaN Power Amplifier

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TRIQUINT

9 to 10 GHz 35 W GaN Power Amplifier

文件：611.33 Kbytes 页数：15 Pages

TRIQUINT

9 - 10 GHz, 35 Watt GaN Power Amplifier

Qorvo's TGA2622-CP is a packaged, high-power X-Band amplifier fabricated on Qorvo's QGaN25 0.25 um GaN on SiC production process. Operating from 9 to 10 GHz, the TGA2622-CP achieves 35 W saturated output power, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB.\nThe TGA262 • Frequency range: 9 - 10 GHz\n• Pout: 45.5 dBm (PIN = 18 dBm)\n• PAE: > 43% (PIN = 18 dBm)\n• Power gain: 27.5 dB (PIN = 18 dBm)\n• Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical (Pulsed: PW = 100 us, DC = 10%)\n• Package dimensions: 15.2 x 15.2 x 3.5 mm\n• Package base is pure Cu offer;

Qorvo

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