32 ??38 GHz 10 Watt GaN Amplifier

文件：571.85 Kbytes 页数：21 Pages

QORVO

威讯联合

32 - 38 GHz 10 W GaN Amplifier

Qorvo's TGA2222 is a wide band power amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 32 - 38 GHz, the TGA2222 provides 40 dBm (10 W) of saturated output power and 16 dB of large-signal gain while achieving > 22% power-added efficiency.\nThe TGA2222 e • Frequency Range: 32 – 38 GHz\n• PSAT (PIN = 24 dBm): > 40 dBm\n• PAE (PIN = 24 dBm): > 22 %\n• Power Gain (PIN = 24 dBm): > 16 dB\n• Small Signal Gain: > 25 dB\n• Bias (pulsed): VD = 26 V, IDQ = 640 mA\n• Bias (CW): VD = 24 V, IDQ = 640 mA\n• Die Dimensions: 3.43 x 2.65 x 0.05 mm;

Qorvo

威讯联合

32 ??38 GHz 10 Watt GaN Amplifier

文件：571.85 Kbytes 页数：21 Pages

QORVO

威讯联合

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

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PANASONIC

松下

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

文件：68.7 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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SUTEX