2 – 18 GHz 5 W Power Amplifier

Key Features • Frequency Range: 2 – 18 GHz • POUT: 37 dBm @ PIN = 23 dBm • PAE: 20 % @ PIN = 23 dBm • Large Signal Gain (PIN = 23 dBm): 14 dB • Small Signal Gain: 22 dB • Return Loss: 7 dB • Bias: VD = +22 V, IDQ = 450 mA, VG = −2.3 V Typical • Chip Dimensions: 2.87 x 4.87 x 0.10 mm •

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QORVO

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2 to 18 GHz 5W GaN Power Amplifier

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2 - 18 GHz, 5 Watt GaN Power Amplifier

Qorvo's TGA2214 is a wideband power amplifier fabricated on Qorvo's TQGaN15 GaN on SiC process. The TGA2214 operates from 2 - 18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency.\nThis combination of wideband power, gain a • Frequency range: 2 - 18 GHz\n• Pout: > 37 dBm at PIN = 23 dBm\n• PAE: > 20 % at Pin = 23 dBm\n• Large signal gain (PIN = 23 dBm): > 14 dB\n• Small signal gain: > 22 dB\n• Return Loss: > 7 dB\n• Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V typical\n• Chip dimensions: 3 x 5 x 0.10 mm\n• Performanc;

Qorvo

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2 – 18 GHz 4 W GaN Power Amplifier

Applications • Test Equipment • Electronic Warfare • Military and Commercial Radar Product Features • Frequency Range: 2 – 18 GHz • POUT: > 36 dBm at PIN = 23 dBm • PAE: > 15 % CW at PIN = 23 dBm • Small Signal Gain: > 22 dB • IM3:

文件：602.94 Kbytes 页数：13 Pages

QORVO

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2 to 18 GHz 5W GaN Power Amplifier

文件：471.37 Kbytes 页数：13 Pages

TRIQUINT

2 - 18 GHz, 4 Watt GaN Power Amplifier

Qorvo's TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo's TQGaN15 0.15um GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214-CP generates > 4 W saturated output power with a power-added efficiency of > 15 %, and > 14 dB large signal gain across the entire operationa • Frequency range: 2 - 18 GHz\n• Pout: > 36 dBm at PIN = 23 dBm\n• PAE: > 15 % CW at Pin = 23 dBm\n• Large signal gain (Pin = 23 dBm): > 14 dB\n• Small signal gain: > 22 dB\n• IM3: < -17 dBc at 30 dBm Pout/Tone\n• Bias: VD = 22 V, IDQ = 600 mA, VG = -2.3 V typical\n• Package dimensions: 15.2 x 1;

Qorvo

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