Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

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Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

文件：482.49 Kbytes 页数：3 Pages

TRIQUINT

Ka Band 2 Watt Power Amplifier

Key Features and Performance\n• 0.25 um pHEMT Technology\n• 20 dB Nominal Gain\n• 2W Nominal Pout\n• -30 dBc IMR3 @ 26 dBm SCL\n• Bias 7V @ 1.4 A\n• Chip Dimensions 5.89 mm x 3.66 mmPrimary Applications\n• LMDS\n• Point-to-Point Radio\n• Satellite Ground Terminal\n\nRelease Status\n• Currently shipp

Qorvo

威讯联合

OFF-LINE SWITCH MODE TRANSFORMERS

GENERAL APPLICATION INFORMATION Premier Magnetics Off-Line Switch Mode Transformers have been designed for use with Power Integrations, Inc. TOPXXX series of off-line PWM switching regulators in the Flyback Buck-Boost circuit configuration. This conversion topology can provide isolated multiple o

文件：301.8 Kbytes 页数：9 Pages

PMI

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages

文件：123.24 Kbytes 页数：4 Pages

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages

文件：123.24 Kbytes 页数：4 Pages

ZETEX