TG1SLASH8

SILICON THERMISTORS

[Microsemi] DESCRIPTION TheTG1/8thermistorisencapsulatedinaglass,hermeticallysealedpackage.TheTM1/8andTM1/4thermistorsareencapsulatedinamoldedpackage.Bothhavehotsolder-dippedleadsandareusedintemperaturesensingandcompensationcircuits.

TG1SLASH8

POSITIVE TEMPERATURE COEFFICIENT SILICON THERMISTORS

DESCRIPTION TheTG1/8thermistorisencapsulatedinaglass,hermeticallysealedpackage.TheTM1/8andTM1/4thermistorsareencapsulatedinamoldedpackage.Bothhavehotsolder-dippedleadsandareusedintemperaturesensingandcompensationcircuits.

TG-20A

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp

TG-22

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp

TG-221

HIGH-ENERGY TRIGGERED SPARK GAPS

DESCRIPTION CPClaresTriggergapsarehigh-energysparkgapsthatarecapableofswitchingstoredenergyinafractionofamicrosecond.Triggergapsrequirenostandbypower,areextremelyrugged,andrequireonlyalow-energy,highvoltagetriggeringpulse.TheminiatureTAseries(1-15kV)provi

TG2210FT

RF SPDT Switch

Switchthereceivefilterformobilecommunication. Switchthediversityantenna. Switchthelocalsignal. Features LowinsertionLoss:LOSS=0.4dB(typ.) Highisolation:ISL=30dB(typ.) Lowvoltageoperation:VC=0V/2.5V Smallpackage:TU6package(2.0×1.25×0.6mm

TG2211FT

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

AntennaswitchesforBluetoothclass2and3 Switchthediversityantenna Switchthereceivefilterformobilecommunication Switchthelocalsignal Features Fewerexternalparts:On-chipinvertercircuit LowinsertionLoss:LOSS=0.45dB(typ.)@1.0GHz

TG2213S

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

AntennaswitchforBluetoothclass2,3 Diversityantennaswitching Filterswitchingformobilecommunication Localsignalswitching Features LowinsertionLoss:LOSS=0.35dB(typ.)@1.0GHz =0.45dB(typ.)@2.5GHz Highisolation:ISL=24dB(

TG2216TU

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

AntennaswitchesforBluetoothClass1,wirelessLANandPHS Filterswitchingformobilecommunication Features LowinsertionLoss:LOSS=0.5dB(typ.)@1.0GHz =0.7dB(typ.)@2.5GHz Highisolation:ISL=25dB(typ.)@1.0GHz

TG-222

HIGH-ENERGY TRIGGERED SPARK GAPS

DESCRIPTION CPClaresTriggergapsarehigh-energysparkgapsthatarecapableofswitchingstoredenergyinafractionofamicrosecond.Triggergapsrequirenostandbypower,areextremelyrugged,andrequireonlyalow-energy,highvoltagetriggeringpulse.TheminiatureTAseries(1-15kV)provi