TIP120

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

TIP120

NPN(MEDIUMPOWERLINEARSWITCHINGAPPLICATIONS)

MEDIUMPOWERLINEARSWITCHINGAPPLICATIONS •ComplementarytoTIP125

TIP120

MediumPowerLinearSwitchingApplications

Features •MediumPowerLinearSwitchingApplications •ComplementarytoTIP125/TIP126/TIP127

TIP120

PlasticMedium-PowerComplementarySiliconTransistors

TIP120

Plastic-EncapsulatedTransistors

TIP120

Si-EpitaxialPlanarDarlingtonPowerTransistors

TIP120

DarlingtonTransistors

[SGS] POWERDARLINGTONS TheTIP120,TIP121andTIP122aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationinJedecTO-220plasticpackage,intendedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesaretheTIP125,TIP126andTIP127res

TIP120

DarlingtonPowerTransistors(NPN)

Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TIP120

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc VCEO(sus)=60Vdc(Min)−TIP120,TIP125 =80Vdc(Min)−TIP121,TIP126

TIP120

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP125/126/127 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications.