SAW-Filter

Surface Acoustic Wave (SAW) devices are compact, cost competitive radio frequency (RF) solutions that can be used in a wide range of applications from VHF-band to S-band frequencies. Such microwave acoustic devices utilize conversion between electromagnetic and mechanical energy by use of the piezoe SAW filter for standard applications\nLow loss\nCeramic surface mount package\nHermetically sealed\nNo matching required for operation at 50 Ω \nRoHS (2011/65/EU+2015/863/EU) compliant, Pb-free;

Microchip

微芯科技

Vectron International Filter specification

文件：92.64 Kbytes 页数：5 Pages

VECTRON

SWITCHING DUAL P-CHANNEL POWER MOSFET

DESCRIPTION The µ PA1774 is Dual P-channel MOS Field Effect Transistor. FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 250 mΩ MAX. (VGS = –10 V, ID = –2.0 A) RDS(on)2 = 300 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)3 = 330 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A) •

文件：78.58 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1774 is Dual P-channel MOS Field Effect Transistor. FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 250 mΩ MAX. (VGS = –10 V, ID = –2.0 A) RDS(on)2 = 300 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)3 = 330 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A) • Low input c

文件：304.36 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING DUAL P-CHANNEL POWER MOSFET

DESCRIPTION The µ PA1774 is Dual P-channel MOS Field Effect Transistor. FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 250 mΩ MAX. (VGS = –10 V, ID = –2.0 A) RDS(on)2 = 300 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)3 = 330 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A) •

文件：78.58 Kbytes 页数：8 Pages

NEC

瑞萨