TIP125

POWERTRANSISTORS(5.0A,60-100V,65W)

...designedforgeneral−purposeamplifierandlow−speedswitchingapplications. FEATURES: •Collector−EmitterSustainingVoltage− VCEO(sus)=60V(Min)−TIP120,TIP125 =80V(Min)−TIP121,TIP126 =100V(Min)−TIP122,TIP127 •LowColl

TIP125

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

TIP125

PowerDarlingtonsforLinearandSwitchingApplications

TIP120,121,122NPNPLASTICPOWERTRANSISTORS TIP125,126,127PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

TIP125

MediumPowerLinearSwitchingApplications

PNPEpitaxialDarlingtonTransistor Features •MediumPowerLinearSwitchingApplications •ComplementarytoTIP120/TIP121/TIP122

TIP125

Si-EpitaxialPlanarTransistors

Si-EpitaxialPlanarTransistors •Collectorcurrent5A •PlasticcaseTO-220AB •Weightapprox.2.2g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

TIP125

DarlingtonPowerTransistors(PNP)

DarlingtonPowerTransistors(PNP) Features •Designedforgeneral-purposeamplifierandlowspeed switchingapplications •RoHSCompliant

TIP125

TO-220-PowerTransistorsandDarlingtons

TIP125

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltIn Base-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP120/121/122

TIP125

TO-220-PNPPlasticPowerTransistors

TIP125

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLNGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP120/121/122 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications