首页 >TFMCJ120C-W>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Si-EpitaxialPlanarDarlingtonPowerTransistors | Diotec Diotec Semiconductor | Diotec | ||
DarlingtonTransistors [SGS] POWERDARLINGTONS TheTIP120,TIP121andTIP122aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationinJedecTO-220plasticpackage,intendedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesaretheTIP125,TIP126andTIP127res | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant | TAITRON TAITRON Components Incorporated | TAITRON | ||
DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc VCEO(sus)=60Vdc(Min)−TIP120,TIP125 =80Vdc(Min)−TIP121,TIP126 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconNPNDarlingtonPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP125/126/127 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications. | SAVANTIC Savantic, Inc. | SAVANTIC | ||
TO-220-PowerTransistorsandDarlingtons | RECTRON Rectron Semiconductor | RECTRON | ||
MonolithicConstructionWithBuiltInBase-EmitterShuntResistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP125/126/127 | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
NPNEpitaxialDarlingtonTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •MountingTorgue:5in-lbsMaximum •Lowcollector-emittersaturationvoltage •Amplifierapplications-emittershuntresistors •TO-220compactpackage •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRo | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
ComplementarypowerDarlingtontransistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
PlasticMedium-PowerComplementarySiliconTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
TFMCJ120C-W
- 功能描述：
TVS 二极管 - 瞬态电压抑制器 bi-dir
- RoHS：
否
- 制造商：
Vishay Semiconductors
- 极性：
Bidirectional
- 击穿电压：
58.9 V
- 钳位电压：
77.4 V
- 峰值浪涌电流：
38.8 A
- 封装/箱体：
DO-214AB
- 最小工作温度：
- 55 C
- 最大工作温度：
+ 150 C
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RECTRON |
2020+ |
DO-214AB-2(SMC) |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
RECTRON |
19+ |
DO-214AB |
200000 |
原装库存 |
询价 | ||
RECTRON |
20+ |
DO-214AB |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
RECTRON |
2022+ |
DO-214AB |
20000 |
只做原装进口现货.假一罚十 |
询价 | ||
RECTRON |
DO-214AB |
89000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
RECTRON |
23+ |
SMC |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
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