TIP120

Plastic-EncapsulatedTransistors

TIP120

Si-EpitaxialPlanarDarlingtonPowerTransistors

TIP120

DarlingtonTransistors

[SGS] POWERDARLINGTONS TheTIP120,TIP121andTIP122aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationinJedecTO-220plasticpackage,intendedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesaretheTIP125,TIP126andTIP127res

TIP120

DarlingtonPowerTransistors(NPN)

Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TIP120

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc VCEO(sus)=60Vdc(Min)−TIP120,TIP125 =80Vdc(Min)−TIP121,TIP126

TIP120

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP125/126/127 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications.

TIP120

TO-220-PowerTransistorsandDarlingtons

TIP120

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP125/126/127

TIP120

NPNEpitaxialDarlingtonTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •MountingTorgue:5in-lbsMaximum •Lowcollector-emittersaturationvoltage •Amplifierapplications-emittershuntresistors •TO-220compactpackage •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRo

TIP120

ComplementarypowerDarlingtontransistors