TEP3324D

Marking：3324P；Package：DFN2510；Ultra Low Capacitance ESD Pro tection Array

TPESD3324P

4-LineUni-directionalTVSDiode

Features Ultralowcapacitance:0.3pFtypical(I/Oto1/0) Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage Upto4datalinesandonepowerlineprotects Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischar

TPESD3324PA

LowCapactionce4-LineUni-directionalTVSDiode

Features Ultralowcapacitance:0.1pFtypical(I/Oto1/0) Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage Upto4datalinesandonepowerlineprotects Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischar

TPRCLAMP3324P

4-LineUni-directionalTVSDiode

Features Ultralowcapacitance:0.3pFtypical(11OtoIO) Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvokage Up104datalinesandonepowerlineprotects ‘Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Airdischarge:£20KV Contactdischarg

UCLAMP3324P

LowVoltageTVSforESDProtection

UCLAMP3324P.TCT

LowVoltageTVSforESDProtection

USB3324A-GL-TR

MiniatureHi-SpeedUSBTransceiverwith1.8VULPIInterface

VTE3324LA

GaAsInfraredEmittingDiodes

DESCRIPTION Thisnarrowbeamangle,3mmdiameterplasticpackages,GaAs,940nmemitterissuitableforuseinopticalswitchapplications.

VTE3324LAH

GaAsInfraredEmittingDiodes

DESCRIPTION Thisnarrowbeamangle,3mmdiameterplasticpackages,GaAs,940nmemitterissuitableforuseinopticalswitchapplications.

VTT3324LA

.025NPNPhototransistors

PRODUCTDESCRIPTION AsmallareahighspeedNPNsiliconphototransistormountedina3mmdiameter,lensed,endlooking,transparentplasticpackage.ThesedevicesarespectrallyandmechanicallymatchedtotheVTE337xLAseriesofIREDs.